Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications Jr Reprint des Originals von 1911

Reprint des Originals von 1911 mit diversen Abbildungen

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Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications Jr Reprint des Originals von 1911The field of narrow gap II VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in